advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 300v lower on-resistance r ds(on) 66m fast switching characteristic i d 36a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i dm a p d @t c =25 w e as single pulse avalanche energy 3 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 0.6 /w rthj-a maximum thermal resistance, junction-ambient 40 /w data and specifications subject to change without notice + 30 parameter drain-source voltage pulsed drain current 1 gate-source voltage ap80n30w rating 300 144 201502254 halogen-free product 1 drain current, v gs @ 10v 36 total power dissipation 208 -55 to 150 operating junction temperature 150 45 thermal data parameter storage temperature range g d s g d s to-3p a p80n30 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-3p package is widely preferred for commercial-industrial applications. the device is suited for switch mode power supplies, dc-ac converters and high current high speed switching circuits. .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 300 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =30a - - 66 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 3 - 4.5 v g fs forward transconductance v ds =10v, i d =30a - 56 - s i dss drain-source leakage current v ds =240v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 30v, v ds =0v - - + 0.1 ua q g total gate charge i d =30a - 117 180 nc q gs gate-source charge v ds =240v - 28 - nc q gd gate-drain ("miller") charge v gs =10v - 42 - nc t d(on) turn-on delay time v ds =150v - 40 - ns t r rise time i d =30a - 90 - ns t d(off) turn-off delay time r g =10 ? - 165 - ns t f fall time v gs =10v - 95 - ns c iss input capacitance v gs =0v - 5700 9120 pf c oss output capacitance v ds =30v - 525 - pf c rss reverse transfer capacitance f=1.0mhz - 10 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =30a, v gs =0v - - 1.5 v t rr reverse recovery time i s =12a, v gs =0v - 310 - ns q rr reverse recovery charge di/dt=100a/s - 3.5 - c notes: 1.pulse width limited by max. junction temperature 2.pulse test 3.starting t j =25 o c , v dd =50v , l=0.1mh , r g =25 this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap80n30w .
ap80n30 w fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 50 55 60 65 70 45678910 v gs gate-to-source voltage (v) r ds(on) (m ) t c =25 o c i d =30a 0.3 0.8 1.3 1.8 2.3 2.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =30a v g =10v 0 20 40 60 80 100 120 0.0 4.0 8.0 12.0 16.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v v g =5.0v 0 10 20 30 40 50 60 0.0 4.0 8.0 12.0 16.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 9.0v 8.0v 7.0v v g =5.0v 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c .
ap80n30 w fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 2 4 6 8 10 12 0 40 80 120 160 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =30a v ds =240v q v g 10v q gs q gd q g charge 0 2000 4000 6000 8000 1 6 11 16 21 26 31 36 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on) t d(on) t r t d(off) t f v ds v gs 10% 90% .
ap80n30w marking information 5 part numbe r 80n30w ywwsss date code (ywwsss) y last digit of the year ww week sss sequence package code .
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